Fig. 5From: Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting DiodesResponse (τ response), rise (τ rise), delay (τ delay), and recombination (τ recombination ) times as functions of applied pulse voltage for the two LEDsBack to article page