Open Access

Erratum to: Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles

  • Ashish Chhaganlal Gandhi1, 2,
  • Ting Shan Chan3,
  • Jayashree Pant4 and
  • Sheng Yun Wu1Email author
Nanoscale Research Letters201712:334

https://doi.org/10.1186/s11671-017-2090-0

Received: 19 April 2017

Accepted: 19 April 2017

Published: 5 May 2017

The original article was published in Nanoscale Research Letters 2017 12:207

Erratum

In the original publication [1] was an error in the authors contribution. The correct version can be found here:

“SYW and ACG wrote, conceived, and designed the experiments. ACG and JP grew the samples and analyzed the data. TSC and JP contributed the experimental facilities and valuable discussions. All authors discussed the results, contributed to the manuscript text, commented on the manuscript, and approved its final version.”

Notes

Declarations

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Authors’ Affiliations

(1)
Department of Physics, National Dong Hwa University
(2)
Center for Condensed Matter Sciences, National Taiwan University
(3)
National Synchrotron Radiation Research Center
(4)
Department of Physics, Abasaheb Garware College, Savitribai Phule Pune University

Reference

  1. (2017) Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles. Nanoscale Res Lett 12:207. doi:10.1186/s11671-017-1988-x

Copyright

© The Author(s). 2017

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