Fig. 3
(Color online) Room temperature (T = 300 K) PV and absorption spectra of the a metamorphic InAs/In0.15Ga0.85As and b conventional InAs/GaAs QD structures. PV was measured contacted to only MBE layers; in the inset, the PV spectra measured through the semi-insulating GaAs substrates in the metamorphic and conventional QD structures (solid and dash line, respectively). The QD PL spectra in arbitrary units are shown for easier comparison