Fig. 4From: Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device a The energy band diagram in depletion region to illustrate the conductance maximum loss induced by buffer traps irrelevant with V G. b Energy band bending in the subthreshold region to illustrate the conductance maximum loss induced by interface traps correlated with V G Back to article page