Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Table 1 Structure parameters of InGaN/GaN MQWs determined by HRXRD fitting

Sample	H₂ percentage (%)	In content (%)	FWHM of InGaN “−1st” diffraction peak (arcsec)	Slope of liner fitting
S₁	0	11.84	169.66	−11.27
S₂	2.50	12.04	165.43	−10.79
S₃	6.25	11.67	163.77	−10.49
S₄	10	11.60	167.19	−11.68
S₅	50	9.90	170.13	−33.92