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Table 2 Energy of deep levels and type of defect

From: Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing

Level label	Energy level, eV	Defect type	Level label	Energy level, eV	Defect type
E1	E _v + 0.14	Dislocation–V	E6	E _v + 0.23	Dislocation–Si_I
E2	E _c – 0.45	Complex Fe–O	E7	E _v + 0.26	Dislocation–O
E3	E _v + 0.18	Complex C_S–O_I	E8	E _c – 0.15	V–O
E4	E _v + 0.04	V	E9	E _v + 0.31	C_I–O_I
E5	E _c – 0.08	60° dislocation	E10	E _v + 0.4	Cluster Si_I + Si_I

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