Fig. 8From: Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical SimulationGain concentration distribution at 30 mA for temperatures of 20, 40, 60, and 80 °C when the barrier thicknesses are a 6 and b 15 nm. The T 0 value for each doping concentration is shown. Here, barrier doping concentration is fixed at 1 × 1018 cm−3 Back to article page