Fig. 8From: Compliance-Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour a I–V characteristics of the interfacial switching for the tri-layer TiN/ZrO2/ZrO2 − x /ZrO2/TiN device with varying RESET voltages. b Endurance test of 100 cycles for the interfacial switching with different RESET voltagesBack to article page