Fig. 1From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer DepositionThe schematic of the RRAM device of HfO2/TiO2/HfO2 trilayer-structure by ALDBack to article page