Fig. 8From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer DepositionSchematic diagrams of electroforming and reset of trilayer-structure of HfO2/TiO2/HfO2 with symmetric Pt top and bottom electrodes. a–d Electroforming at positive voltage and reset at negative voltage. e–g Electroforming at negative voltage and reset at positive voltageBack to article page