Fig. 9From: Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer DepositionSchematic diagrams of electroforming and reset of trilayer-structure of HfO2/TiO2/HfO2 with asymmetric Pt top electrode and TiN bottom electrode. a–d Electroforming at negative voltage and reset at positive voltage. e–g Electroforming at positive voltage and reset at negative voltageBack to article page