Fig. 3From: Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch CharacteristicsPlots of resistance variation versus time for a TaO/HfO x and b TaO/AlO x devices. Both plots contain HRS and LRS variation at reading voltage = 1 V in 85 °C. After the I–V sweeps of each virgin device had been set, the device was baked and then programmed to LRS again: c TaO/AlO x (150 °C for 48 h); d TaO/HfO x (120 °C for 120 h)Back to article page