Fig. 3
From: Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
a Current-voltage characteristics of PAD-AZO, ALD-AZO and two-step AZO grown on p-GaN. The inner graph of (a) shows the I-V curve of ALD-AZO that annealed by RTA in N2 for 60 s. b shows the raw data and linear fitting data of the specific contact of the PAD-AZO (without ALD-AZO) and two-step AZO (with ALD-AZO) to extract specific contact resistance, the inner graph of (b) shows the structure of CTLM