Fig. 2From: Theoretical Investigation of Biaxially Tensile-Strained Germanium NanowiresResidual strain distribution of a GeNW in situation A with the basal width of 40 nm: a x component strain ε xx , b z component strain ε zz , and c shear strain in x-y plane ε xy . The zigzag shape at the bottom denotes the partial substrate layer (the following has the same meaning)Back to article page