Fig. 10
From: Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing
The electrical transport measurement of α-SiNW in Fig. 3. Two-terminal device was used to measure the resistivity of nanowire [25]. The wire was mechanically removed from the substrate by nano-operator equipped on focused ion beam (FIB) (FEI, QUANTA3D 600FIB System). Then, nanowire was weld on the two electrodes by Pt deposited with assisted electron beam. The resistivity of the nanowire was measured by Cascade Semi-automatic probe station HP 4156. Finally, the room temperature resistivity of the nanowire in Fig. 3 is 2.15 × 103 Ω·cm, measured by two-probe method