Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

Table 1 Summary of different SiNW manufacture method

Manufacture method		Advantages	Disadvantages	References
Top-down	RIE	The site and size of nanowires were well controlled.	Need nanofabrication tools.	[7,8,9,10]
	Metal-catalyzed electroless etching	The site and size of nanowires were well controlled.	Template fabrication process was complex.	[11]
	MEMS technique	The site and size of nanowires were well controlled, without any nanofabrication tools.	Complex fabrication process and time-consuming.	[13]
Bottom-up	CVD	Simple and low cost and the quality of SiNW was good.	Novel metal materials were prohibited in clean rooms. Controllability is poor.	[14,15,16]
	OAG	Simple and low cost and no metal catalyst is needed.	Controllability is poor. The compatibility with Si-based integration technology was poor.	[17, 18]
	Laser ablation			[19]
	SiO evaporation			[20]