Fig. 5
From: Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy
a–c RHEED pattern of the 2-ML MoSe2 films after annealing at 850 (a), 720 (b), and 600 °C (c) in UHV condition. d TOF-MEIS spectra of the 2-ML MoSe2 films after annealing at 720 °C (blue) and 600 °C (red). e, f Depth profile of chemical composition of the annealed films at 720 °C (e) and 600 °C (f), obtained from the TOF-MEIS analysis. Note that the stoichiometric ratio of Mo:Se is 1:1.7 and 1:2 for the 720 and 600 °C samples, respectively