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Table 1 Summary of the BEs (eV) of Ga 3d and Al 2p at different detection angles for all the samples, with the error of ± 0.1 eV

From: Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

Samples Core level Chemical bonds Detection angles θ
27.5° 42.5° 57.5° 72.5°
S1 Ga 3d Ga–N 20.2 20.1 20.1 20.0
Ga–O 21.2 20.8 20.8 20.8
Al 2p Al–O 74.7 74.7 74.7 74.7
S2 Ga 3d Ga–N 20.1 20.0 20 20.0
Ga–O 20.8 20.8 20.6 20.7
Al 2p Al–O 74.6 74.7 74.7 74.7
S3 Ga 3d Ga–N 20.0 20.2 20.2 20.2
Ga–O 20.9 20.8 20.9 20.9
Al 2p Al–O 74.7 74.7 74.7 74.6