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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Fig. 3

a 2.0 nm Au film at room temperature. b The gold film by RTA at 550 °C in 100 °C/s. c The gold film was ramped up to the 550 °C in 0.1 °C/s. d TEM image of an as-synthesized individual α-In2Se3 nanowire, with an Au nanoparticle tip. SAED pattern of the α-In2Se3 nanowires (inset). e The corresponding HRTEM image of d shows the growth direction of the nanowire is along the [001]. f and g are the EDS spectra of the selected α-In2Se3 nanowire taken from the body part and the tip part, respectively

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