Fig. 10
From: A Collective Study on Modeling and Simulation of Resistive Random Access Memory
a Experimental and b simulated transient responses of a HfO x RRAM device to the − 2.3 V 50 ns input pulses. The experimental result is reported elsewhere [144] and included here in a for convenience. c In a larger time range, the simulated transient response for the same device including the gap size and temperature is shown. Current compliance set at 200 μA in simulation [78]