Fig. 20
From: A Collective Study on Modeling and Simulation of Resistive Random Access Memory
Theoretical i-v curves for a memristor with (realistic) dopant drift modeled by window functions F p (x) = (1 − (2x − 1))2p considering p = 1 (red solid) and p = 10 (green dashed). An external voltage v(t) = 2v0 sin(ω0t/2) is applied. The memristor parameters are w0/D = 0.5 and ROFF/RON = 50. The memristive behavior at p = 10 has been enhanced. The slope of the i-v curve at a small time period is the same, R0−1, in both cases whereas the slope on return sweep depends on the window function. For a large p value, the return-sweep slope is RON−1 = 1> > R0−1, corresponding to a fully doped memristor [94]