Fig. 7From: Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin OxideThe field distributions of Ex for the TE mode a–b and Ey c–d for the TM mode along the y-cut and x-cut at the center of the Si waveguide. a and c are “ON” state. b and d are “OFF” state. HSi = 340 nm, WSi = 310 nm, Hp = 20 nm, Wp = 25 nm, DITO = 10 nm, HAu = 100 nmBack to article page