Fig. 3From: Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET SensorsI–V characteristics of NW FET, measured at optical excitation (VBG = − 1 V). Output current–voltage characteristics of NW FET sample with length l = 10 μm, measured in the dark and at excitation by the light specific power 0.85 and 1.6 W/cm2, at T = 300 K and VBG = − 1 VBack to article page