Fig. 5From: Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEMX-ray diffraction data (blue lines) and simulated fits (orange lines) of sample S1 (a) and sample S2 (b). Vertical dashed lines highlighting the GaAs peak at 0° arc seconds and the GaAsBi film peak located at negative arc seconds. The shoulder on the right GaAs peak in Fig. 5b is indicative of a GaAs cap layer under tensile strainBack to article page