Fig. 5From: Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control LayerLogarithmic transfer curves of stripe patterned a SWCNT/BNT/HfO2-FeFET, b SWCNT/BNT-FeFET, and c SWCNT/SiO2/HfO2-FET at V DS = 0.6 V. The arrows indicate an anticlockwise hysteresis loop, and the solid lines exhibit the width of memory windowBack to article page