A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation

Table 1 The calculated threshold displacement energies and associated defects after the recoil events in bulk Si and Ge. V_X: X vacancy (X = Si or Ge); X_int: X interstitial (X = Si or Ge)

	Bulk Si		Bulk Ge
Direction	E_d (eV)	Defect type	E_d (eV)	Defect type
[001]	20, 17.4^a, 21^c	V_Si + Si_int	18, 18.5^b, ~ 18^f	V_Ge + Ge_int
[110]	47, 24^a, ~ 47.6^d	2V_Si + 2Si_int	28.5	V_Ge + Ge_int
[111]	9.5, 11.3^a, ~ 12.9^e	V_Si + Si_int	9.5, 12.5^b, ~ 15^c	V_Ge + Ge_int
\( \left[\overline{1}\overline{1}\overline{1}\right] \)	10	V_Si + Si_int	9.5, 10.5^b	V_Ge + Ge_int