Table 1 Material parameters used for InGaAs/InAlAs APD simulation [18, 26]
From: Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
Parameters/InAlAs | Units | Electron | Hole |
|---|---|---|---|
Impact coefficient a | cm−1 | 2.1 × 106 | 2.4 × 106 |
Impact coefficient b | V/cm | 1.62 × 106 | 1.86 × 106 |
Effective threshold energy | ev | 3.2 | 3.5 |
SRH lifetime | s | 1 × 10−6 | 1 × 10−6 |
Energy band gap | ev | 1.46 | |
Parameters/InGaAs | Units | Electron | Hole |
BBT coefficient A | 1/V cm | 7.2 × 1019 | |
BBT coefficient B | V/cm | 5.2 × 106 | |
Energy band gap | ev | 0.75 |