Table 1 Comparison of I-V characteristics of a-IGZO-based TFT device with CL-ES structure and BCE structure

V _{th_Avg}

V

− 0.85

+ 0.50

V _{th_Range}

V

0.72

2.14

Subthreshold voltage swing

V/dec.

0.18

0.77

I_on/I_off ratio

–

3.82 × 10⁶

2.62 × 10⁶

Mobility

cm²/V s

8.05

6.03