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Table 1 Comparison of I-V characteristics of a-IGZO-based TFT device with CL-ES structure and BCE structure

From: Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

Item Unit CL-ES BCE
V th_Avg V − 0.85 + 0.50
V th_Range V 0.72 2.14
Subthreshold voltage swing V/dec. 0.18 0.77
Ion/Ioff ratio 3.82 × 106 2.62 × 106
Mobility cm2/V s 8.05 6.03