Fig. 1
From: Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition
a Schematic diagram of the platform for MLG growth by JHD. The inset was the image of the SiC during heating process. b Raman spectra of SiC and MLG grown on 4H-SiC (0001) at different growth temperatures for 5 min. c Raman spectra of MLG grown on 4H-SiC (0001) at 1470 °C for 2, 5, and 10 min, respectively. d Raman spectra characterized from the circled spots A, B, and C marked in the inset of a on the same sample. The sample was prepared at 3.24 A for 5 min