Fig. 10
From: Effects of Etching Variations on Ge/Si Channel Formation and Device Performance

Id–Vg and Id–Vd for the Si FinFET after the top Ge is carelessly etched away. Although Ion/Ioff can reach 108, its on current value is very low
From: Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
Id–Vg and Id–Vd for the Si FinFET after the top Ge is carelessly etched away. Although Ion/Ioff can reach 108, its on current value is very low