Fig. 2From: A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVDRaman spectra and their deconvolution of typical samples deposited under 300 Pa (a), 450 Pa (b), 750 Pa (c), and 1050 Pa (d) and the calculated crystallinity of nc-Si:H thin films deposited under different pressures (e)Back to article page