Fig. 6From: Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaNa XPS depth profiles for each element obtained from the sample with a 7.4-nm-thick AlN. XPS core-level spectra of b Ga 3p3/2, c O 1s, and d Al 2p for the samples with 0-, 1.5- and 7.4-nm-thick AlNBack to article page