Fig. 9From: Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaNFowler–Nordheim (FN) tunneling plots of ln(J/E2) vs. 1/E with the linear fits to the experimental data for the samples with a 0.7- and b 7.4-nm-thick AlN. The inset in b presents the calculated barrier heights as a function of temperatureBack to article page