Skip to main content

Advertisement

Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays

Fig. 3

a Reflection/transmission and b absorption of the arrays of H = 2000 nm and D = 100 nm. c Reflection, d transmission, and e absorption of the arrays of H = 2000 nm and D = 500 nm. f Absorption of the pure NW arrays with D of 100, 300, and 500 nm and H = 2000 nm. The inset of b shows the electric field strength distribution of the HE11 mode, and the white dotted circle outlines the wire periphery. The inset of f exhibits the electric field strength distribution of the pure NW array with H = 2000 nm and D = 500 nm at the wavelength of 810 nm

Back to article page