Fig. 3From: Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and MemoryMemory switching of V/SiOx/AlOy/p++Si when a positive forming with CCL of 30 μA is applied. a Typical I–V curves. b Normalized conductance. c In (I) versus 1000/T. d Schematic drawing of forming processBack to article page