Table 1 The comparison of reported work about β-Ga2O3 MOSFETs
Channel | Carrier density/cm−3 | Device structure | Dielectric (method) | Process | S/D metal electrode |
|---|---|---|---|---|---|
Flake [19] | 5.5 × 1017 | BG (D-M) | 285-nm SiO2 | Tube annealing | Ti/Au |
Flake [88] | 3 × 1017 | BG (D-M) | 300-nm SiO2 | – | Ti/Au |
Flake [89] | 3 × 1017 | TG (E-M) | 42-nm HfO2(ALD) | – | Ti/Au |
Flake [55] | 3.7 × 1017 | BG (D-M) | 300-nm SiO2 | RTP | Ti/Au |
Flake [52] | 2.7 × 1018 | BG (D/E-M) | 300-nm SiO2 | Ar plasma bombardment | Ti/Al/Au |
Flake [50] | 8 × 1018 | BG (D/E-M) | 300-nm SiO2 | Ar plasma bombardment | Ti/Al/Au |
Sn-doped epilayer [12] | 3 × 1017 | TG (D-M) | 20-nm Al2O3(ALD) | Si+ implantation(S/D) + RIE + RTP | Ti/Au |
UID epilayer [57] | 5 × 1019 | FP (D-M) | 20-nm Al2O3(ALD) | Si+ implantation (channel + S/D) + RIE + RTP | Ti/Au |
Sn-doped epilayer [90] | 6.34 × 1015 | TG (D/E-M) | 20-nm SiO2(ALD) | RIE + RTP | Ti/Au |
Sn-doped epilayer [13] | 4.8 × 1017 | TG (E-M) | 20-nm Al2O3(ALD) | RTP | Ti/Al/Ni/Au |
Sn-doped epilayer [63] | 2.3 × 1017 | WG (E-M) | 20-nm Al2O3(ALD) | RTP | Ti/Al/Ni/Au |
UID epilayer [46] | < 4 × 1014 | TG (E-M) | 50-nm Al2O3(ALD) | Si+ implantation(S/D) + RIE + RTP | Ti/Au |
Sn-doped epilayer [53] | 2 × 1017 | TG (D-M) | 20-nm SiO2 (PEALD) | Spin-on-glass doping + RTP | Ti/Au |
Ge-doped epilayer [21] | 4 × 1017 | TG (D-M) | 20-nm Al2O3(ALD) | RTP | Ti/Al/Ni/Au |
UID epilayer [64] | – | GR (E-M) | 20-nm SiO2(ALD) | Highly doped epitaxial cap layer on S/D + RIE + RTP | Ti/Al/Ni/Au |