Fig. 4From: Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles CalculationNormal strain effects on a the bandgap and biding energy, and b the band-edge positions of GaTe/C2N vdW heterostructure. The redox potentials of water splitting at pH 0 (red dashed line) and pH 2 (blue dashed line) are shown for comparisonBack to article page