Fig. 6From: An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Applicationa X-ray diffraction (XRD) curve of (100) β-Ga2O3 single-crystal substrate, clearly showing the peaks of (400), (600), and (800) planes. b Cross-sectional high-resolution transmission electron microscope (HRTEM) image of Pt/β-Ga2O3 Schottky contact and fast Fourier transformed (FFT) micrograph of β-Ga2O3 crystal. c Forward and reverse J–V curve of a Pt/β-Ga2O3 SBD and the schematic of the SBD (inset). d Forward J–V curve in linear and semi-logarithmic plot. e Temperature-dependent J–V curves and the Richardson’s plot (inset). f Dependence of ON-resistance and forward current density on temperature. Reprinted from ref. [60]Back to article page