Table 1 Comparison of the physical properties of Si, GaN, SiC, and β-Ga2O3 semiconductor [5]
Semiconductor material | Si | GaN | 4H-SiC | β-Ga2O3 |
|---|---|---|---|---|
Bandgap Eg (eV) | 1.1 | 3.4 | 3.3 | 4.7–4.9 |
Electron mobility μ (cm2 V−1 s−1) | 1400 | 1200 | 1000 | 300 |
Breakdown electric field Ebr (MV/cm) | 0.3 | 3.3 | 2.5 | 8 |
Baliga’s FOM (\( \varepsilon \mu {E}_{\mathrm{b}}^3 \)) | 1 | 870 | 340 | 3444 |
Thermal conductivity λ (W cm−1 K−1) | 1.5 | 2.1 | 2.7 | 0.11 |