Fig. 3From: First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier MobilityThe defect formation energies under As-rich and cation-rich conditions in a GaAs, b AlAs and c GaAs/AlAs superlattice. XY: (X, Y = Ga, Al, or As) X occupying the Y lattice site; VX: X vacancy; Xint: X interstitialBack to article page