Skip to main content
SpringerLink
Account
Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

Fig. 3

Cycle-to-cycle cumulative probability distribution of operational voltages in a Ti/CeO2−x/ZnO/Pt and b Ti/ZnO/CeO2−x/Pt heterostructure memory devices. c Statistical analysis of SET and RESET-voltages of Ti/CeO2−x/ZnO/Pt and Ti/ZnO/CeO2−x/Pt heterostructure memory devices. d Statistical evaluation of the electroforming voltages for both Ti/CeO2−x/ZnO/Pt and Ti/ZnO/CeO2−x/Pt heterostructure memory devices

Back to article page

Search

Navigation