Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

Table 1 The elastic modulus C_2D, effective mass m^*, and deformation potential constant E₁. “m₀” denotes the electron mass 9.109 × 10⁻³¹ kg

Type	Pattern	C_2D, N/m		m*, m₀		E₁, eV
Type	Pattern	(ΓM)	(ΓK)	(ΓM)	(ΓK)	E₁, eV
Electron	100%	350.59	475.98	0.967	0.967	9.16
	25% pattern I	337.43	500.41	0.468	0.087	8.22
	25% pattern II	333.96	504.63	1.609	1.096	7.91
	25% pattern III	339.15	504.63	1.941	0.545	7.49
	6.25% pattern I	335.42	502.06	0.491	0.055	7.1
	6.25% pattern II	335.67	502.06	0.169	0.215	6.76
	Stacking pattern I	338.80	459.97	0.881	0.881	10.5
	Stacking pattern II	338.80	459.97	0.901	0.901	9.81
	Stacking pattern III	338.80	459.97	0.884	0.884	9.92
	Stacking pattern IV	338.80	459.97	0.905	0.905	9.45
Hole	100%	350.59	475.98	0.627	0.703	9.40
	25% pattern I	337.43	500.41	2.851	0.101	8.15
	25% pattern II	333.96	504.63	1.071	1.884	8.2
	25% pattern III	339.15	504.63	5.201	2.356	8.1
	6.25% pattern I	335.42	502.06	0.057	0.495	7.72
	6.25% pattern II	335.67	502.06	0.179	0.219	7.55
	Stacking pattern I	338.80	459.97	0.62	0.641	10.5
	Stacking pattern II	338.80	459.97	0.62	0.714	9.81
	Stacking pattern III	338.80	459.97	0.259	0.294	9.92
	Stacking pattern IV	338.80	459.97	0.26	0.282	9.45