Fig. 2From: Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dotsa PL spectra measured at 10 K with an excitation laser intensity of 20 W/cm2. b Extracted PL wavelength and c integrated PL intensity as a function of the growth temperature. d PL spectra measured at 295 K with an excitation laser intensity of 200 W/cm2. e PL wavelength and f integrated PL intensity as functions of the growth temperatureBack to article page