Fig. 4From: Strain Tunable Bandgap and High Carrier Mobility in SiAs and SiAs2 Monolayers from First-Principles StudiesProjected density of states and VBM and CBM’s electron density. The projected density of states (PDOS) of As and Si atoms and the electron density distribution corresponding to VBM and CBM of (a, b) SiAs and (c, d) SiAs2 monolayers. The isosurface value 0.034 e/Å3Back to article page