Fig. 5From: Strain Tunable Bandgap and High Carrier Mobility in SiAs and SiAs2 Monolayers from First-Principles StudiesStrain effects on the geometric structures and band gaps of 2D SiAs and SiAs2. a, c represent SiAs; and b, d denote SiAs2; M, I, and D represent metal, indirect semiconductor, and direct semiconductor, respectivelyBack to article page