Fig. 4From: Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche PhotodiodesSimulation results electric field in multiplication under the Geiger mode. The values of Wmultiplication is 100 nm (black square), 200 nm (black triangle), 300 nm (black circle). Figure 3 presents the simulated field-voltage characteristics in the multiplication layers under the Geiger mode. The thickness of the charge layer is 50 nm, and the thicknesses of the multiplication layer are 100, 200, and 300 nm, respectivelyBack to article page