Fig. 2
From: Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH
Geometric characteristics of the NWs from Fig. 1 as a function of growth temperature and UMDH:TBP ratio: (a) length and mean axial growth rate, (b) coaxial growth rate, (c) tapering parameter, (d) total volume. Each measurement point represents an averaging of 10 to 20 NWs with the error bar representing the standard deviation or error propagation. The mean total volume of a NW in (d) was estimated assuming a truncated cone with circular cross-section