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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Fig. 4

a Off-state TCAD electric field simulation of the Schottky barrier diodes under − 300 V bias. b The electric field simulation of the selected regions in green dashed box. The potential along the y axis at x = 4 μm is present in (c), and the electric field at the edge of the Schottky contact reduced with different effective negative surface charge densities are present in (d)

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