Fig. 2From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationCross-sectional TEM images of Ge pMOSFET gate stacks with a 0.5 nm tSi and b 0.9 nm tSi. HRTEM images in insets show that Si/SiO2 IL is formed between HfO2 and Ge channelBack to article page