Fig. 5From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationa Comparison of inversion Cinv-VGS curves among the Ge pMOSFETs with 0.9 nm tSi on different orientations. Both forward and reverse sweeping are shown. b Statistical plots for the saturated Cinv of the devices showing the negligible differences in Cinv in the inversion regimeBack to article page